315 six-igbt igbtmod? h-series module 100 amperes/600 volts CM100TF-12H powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 dimensions inches millimeters a 4.02 0.02 102 0.5 b 3.58 0.02 91.0 0.5 c 3.15 0.01 80.0 0.25 d 2.913 0.01 74.0 0.25 e 1.69 43.0 f 1.18+0.06/-0.02 30.0+1.5/-0.5 g 1.18 30.0 h 1.16 29.5 j 1.06 27.0 k 0.96 24.5 l 0.87 22.0 m 0.79 20.0 n 0.67 17.0 dimensions inches millimeters p 0.65 16.5 q 0.55 14.0 r 0.47 12.0 s 0.43 11.0 t 0.39 10.0 u 0.33 8.5 v 0.32 8.1 w 0.24 rad. rad. 6.0 x 0.24 6.0 y 0.22 dia. dia. 5.5 z m4 metric m4 aa 0.08 2.0 ab 0.28 7.0 outline drawing and circuit diagram description: powerex igbtmod? modules are designed for use in switching applications. each module consists of six igbt transistors in a three phase bridge configuration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. features: h low drive power h low v ce(sat) h discrete super-fast recovery (70ns) free-wheel diode h high frequency operation (20-25khz) h isolated baseplate for easy heat sinking applications: h ac motor control h motion/servo control h ups h welding power supplies h laser power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM100TF-12H is a 600v (v ces ), 100 ampere six-igbt igbtmod? power module. type current rating v ces amperes volts (x 50) cm 100 12 ab f h v .110 tab c l e a g n d u w aa l b p g k j t r m m aa s x q x q xn z - m4 thd (7 typ.) y dia. (4 typ.) b u pe u pb v pe v pb w pe w p b u ne u nb v ne v nb w ne w n p p n n uvw p bup eup bun eun u bvp evp v bvn evn bwp ewp w bwn ewn p n n
316 CM100TF-12H six-igbt igbtmod? h-series module 100 amperes/600 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 absolute maximum ratings, t j = 25 c unless otherwise specified ratings symbol CM100TF-12H units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage v ges 20 volts collector current i c 100 amperes peak collector current i cm 200* amperes diode forward current i f 100 amperes diode forward surge current i fm 200* amperes power dissipation p d 400 watts max. mounting torque m4 terminal screws C 13 in-lb max. mounting torque m5 mounting screws C 17 in-lb module weight (typical) C 540 grams v isolation v rms 2500 volts * pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v C 2.1 2.8** volts i c = 100a, v ge = 15v, t j = 150 c C 2.15 C volts total gate charge q g v cc = 300v, i c = 100a, v gs = 15v C 300 C nc diode forward voltage v fm i e = 100a, v gs = 0v C C 2.8 volts ** pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies CC 10nf output capacitance c oes v ge = 0v, v ce = 10v, f = 1mhz C C 3.5 nf reverse transfer capacitance c res C C 2 nf resistive turn-on delay time t d(on) C C 120 ns load rise time t r v cc = 300v, i c = 100a, C C 300 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 6.3 w C C 200 ns times fall time t f C C 300 ns diode reverse recovery time t rr i e = 100a, di e /dt = C200a/ m s C C 110 ns diode reverse recovery charge q rr i e = 100a, di e /dt = C200a/ m s C 0.27 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.31 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 0.70 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.033 c/w
317 CM100TF-12H six-igbt igbtmod? h-series module 100 amperes/600 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 15 12 11 8 7 t j = 25 o c 10 9 200 150 100 50 0 v ge = 20v gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 200 150 100 50 0 v ce = 10v t j = 25? t j = 125? collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 50 100 150 200 4 3 2 1 0 v ge = 15v t j = 25? t j = 125? gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25? i c = 40a i c = 200a i c = 100a collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v f = 1mhz 10 1 c ies c oes c res 0 0.8 1.6 2.4 3.2 4.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) t j = 25? collector current, i c , (amperes) switching time, (ns) half-bridge switching characteristics (typical) 10 3 10 1 10 2 10 2 10 1 t d(off) t d(on) t r v cc = 300v v ge = ?5v r g = 6.3 w t j = 125? t f emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 2 10 1 10 2 10 1 10 0 t rr i rr di/dt = -200a/ m sec t j = 25 o c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 100 200 300 400 500 16 12 8 4 0 v cc = 300v v cc = 200v
318 CM100TF-12H six-igbt igbtmod? h-series module 100 amperes/600 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.31 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.7 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
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